MRF7S38040HR3 MRF7S38040HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)
?60
?10
1
?40
?50
10
?30
?20
7th Order
5th Order
3rd Order
100
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO?TONE SPACING (MHz)
1 10010
IM3?U
?20
?30
?50
IMD, INTERMODULATION DISTORTION (dBc)
?40
IM3?L
IM5?U
IM5?L
?60
IM7?L
IM7?U
?15
?50
?55
?45
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
0
110
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
40
35
30
10
100
20
ACPR
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
ACPR (dBc)
ηD
25
15
Gps
VDD
= 30 Vdc, I
DQ
= 450 mA
f1 = 3495
MHz, f2 = 3505 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
VDD
= 30 Vdc, P
out
= 44 W (PEP), I
DQ
= 450
mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 3500 MHz
100
8
16
0
40
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 30 Vdc
IDQ
= 450 mA
f = 3500 MHz
TC
= ?30
C
?30C
35
25C
10
1
15
14
13
12
30
25
20
15
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
01020
10
15
12
13
14
IDQ
= 450 mA
f = 3500 MHz
60
VDD
= 28 V
30 V
?10
?40
?35
C
?30
?25
C
?20
85C
32 V
5
TC
= ?30
C
VDD= 30 Vdc, IDQ
= 450 mA
f = 3500 MHz, 802.16d, 64 QAM 3/4
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
C
25C
?30
85C
30 40
85C
25
?30
25C
85C
11
10
9
10
5
25C
85C
11
50
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